US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 6 for "Semiconductor gate-all-around structure having carbon-doped anti-punch-through (APT) layers over wells" (Taiwanese Inventor)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,294,017, issued on May 6, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor gate-all-around structure having carbon-doped anti-punch-through (APT) layers over wells" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A metal-oxide semiconductor field effect transistor (MOSFET) includes a substrate and a well over the substrate, the well including dopants of a first conductivity-type. The well includes an anti-punch-through (APT) layer at an upper section of the well, the APT layer including the dopants of the first conductivity-type and further including ca...