US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 6 for "Semiconductor device and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,267, issued on May 6, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method of manufacturing the same" was invented by Bi-Shen Lee (Hsinchu, Taiwan), Hai-Dang Trinh (Hsinchu, Taiwan) and Hsun-Chung Kuang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate, a first dielectric layer, an etching stop layer, a second dielectric layer, a conductive via, and a data storage structure. The first dielectric layer is disposed on the substrate. The etching stop layer is...