US Patent Issued to Taiwan Semiconductor Manufacturing on May 6 for "RRAM device with improved performance" (Taiwanese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,295,270, issued on May 6, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"RRAM device with improved performance" was invented by Fa-Shen Jiang (Taoyuan, Taiwan), Cheng-Yuan Tsai (Chu-Pei, Taiwan), Hai-Dang Trinh (Hsinchu, Taiwan), Hsing-Lien Lin (Hsin-Chu, Taiwan) and Bi-Shen Lee (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a resistive random access memory (RRAM) device. In some embodiments, the RRAM device includes a first electrode disposed over a substrate and a second electrode over the first electrode. A doped data storage structure is disposed between the first e...