US Patent Issued to Taiwan Semiconductor Manufacturing on May 6 for "Method of manufacturing a semiconductor device having corner spacers adjacent a fin sidewall" (Taiwanese Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,294,023, issued on May 6, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device having corner spacers adjacent a fin sidewall" was invented by Chen-Ping Chen (Toucheng Township, Taiwan), Kuei-Yu Kao (Hsinchu, Taiwan), Shih-Yao Lin (New Taipei, Taiwan), Chih-Han Lin (Hsinchu, Taiwan), Ming-Ching Chang (Hsinchu, Taiwan) and Chao-Cheng Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a fin protruding from a semiconductor substrate; a gate stack over and along a sidewall of the fin; a gate spacer along a sidewall of the gate stack and along the sid...