US Patent Issued to Taiwan Semiconductor Manufacturing on May 6 for "Method of fabricating semiconductor structure with heating element" (Taiwanese, American Inventors)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,954, issued on May 6, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of fabricating semiconductor structure with heating element" was invented by Chih-Tsung Shih (Hsinchu, Taiwan), Chewn-Pu Jou (Hsinchu, Taiwan), Stefan Rusu (Sunnyvale, Calif.) and Feng-Wei Kuo (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a semiconductor substrate, a semiconductor device and a heating structure. The semiconductor substrate includes a device region and a heating region surrounding the device region. The semiconductor device is located on the device region. The heating...