ALEXANDRIA, Va., June 10 -- United States Patent no. 12,293,799, issued on May 6, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory circuit and method of operating same" was invented by Meng-Sheng Chang (Hsinchu, Taiwan), Chia-En Huang (Hsinchu, Taiwan) and Yih Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of operating a memory circuit includes turning on a first programming device and turning on a first selection device thereby causing a first current to flow through a first fuse element. The first fuse element is coupled between the first selection device and the first programming device. The method further includes turning off a seco...