US Patent Issued to Taiwan Semiconductor Manufacturing on May 6 for "Level shifter with inside self-protection high bias generator" (Taiwanese Inventor)

ALEXANDRIA, Va., June 10 -- United States Patent no. 12,294,366, issued on May 6, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Level shifter with inside self-protection high bias generator" was invented by Yen-An Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of operating the semiconductor device are disclosed. In one aspect, the semiconductor device includes a level shifting circuit configured to generate an output voltage in a second voltage domain corresponding to an input signal in a first voltage domain. The level shifting circuit includes a thick-oxide transistor and a thin-oxide transistor. The semiconductor ...