US Patent Issued to Taiwan Semiconductor Manufacturing on May 27 for "Structure and method for preventing silicide contamination during the manufacture of micro-processors with embedded flash memory" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,488, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Structure and method for preventing silicide contamination during the manufacture of micro-processors with embedded flash memory" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Wei Cheng Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is provided in which a monitor cell is made that is substantially identical to the flash memory cells of an embedded memory array. The monitor cell is formed simultaneously with the cells of the memory array, and so in certain critical aspects, is exactly comparable. An aperture is form...