US Patent Issued to Taiwan Semiconductor Manufacturing on May 27 for "Semiconductor structure including source/drain regions at different levels within semiconductor layer and method of manufacture" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,568, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Semiconductor structure including source/drain regions at different levels within semiconductor layer and method of manufacture" was invented by Yong-Sheng Huang (Hsin-Chu, Taiwan) and Ming Chyi Liu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and method of manufacture is provided. In some embodiments, a semiconductor structure includes a semiconductor layer comprising a first uppermost surface, a lowermost surface, and a first sidewall surface extending between the uppermost surface and the lowermost s...