US Patent Issued to Taiwan Semiconductor Manufacturing on May 27 for "Semiconductor structure having high breakdown voltage etch-stop layer" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,812, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure having high breakdown voltage etch-stop layer" was invented by Joung-Wei Liou (Zhudong Town, Taiwan) and Chin Kun Lan (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a method of forming a semiconductor structure. The method includes depositing an etch-stop layer (ESL) over a first dielectric layer. The ESL layer deposition can include: flowing a first precursor over the first dielectric layer; purging at least a portion of the first precursor; flowing a second precursor over ...