ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,561, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor memory devices with different word lines" was invented by Meng-Sheng Chang (Chubei, Taiwan), Chia-En Huang (Xinfeng Township, Taiwan) and Gu-Huan Li (Zhubei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a bit line (BL); a source line (SL); and a plurality of non-volatile memory cells operatively coupled between the BL and SL, respectively. Each of the plurality of non-volatile memory cells includes a resistor with a variable resistance, a first transistor, and a second transistor that are coupled to e...