US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 27 for "Semiconductor devices with metal intercalated high-k capping" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,730, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor devices with metal intercalated high-k capping" was invented by Chandrashekhar Prakash Savant (Hsinchu, Taiwan), Kin Shun Chong (Hsinchu, Taiwan), Tien-Wei Yu (Hsinchu, Taiwan) and Chia-Ming Tsai (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a structure having a substrate, a semiconductor channel layer over the substrate, an interfacial oxide layer over the semiconductor channel layer, and a high-k gate dielectric layer over the interfacial oxide layer, wherein the semiconductor...