ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,578, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor devices with low leakage current and methods of fabricating the same" was invented by Ming-Yuan Wu (Hsinchu, Taiwan), Ka-Hing Fung (Hsinchu County, Taiwan), Min Jiao (Hsinchu, Taiwan), Da-Wen Lin (Hsinchu, Taiwan) and Wei-Yuan Jheng (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods are provided. In an embodiment, a method includes providing a workpiece including a first hard mask layer on a top surface of a substrate, performing an ion implantation process to form a doped region in t...