ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,538, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor devices" was invented by Chun-Han Chen (Changhua, Taiwan), Chen-Ming Lee (Yangmei, Taiwan), Fu-Kai Yang (Hsinchu, Taiwan) and Mei-Yun Wang (Chu-Pei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a gate electrode; a epitaxial source/drain region adjacent the gate electrode; one or more inter-layer dielectric (ILD) layers over the epitaxial source/drain region; a first source/drain contact extending through the ILD layers, the first source/drain contact connected to the epitaxial source/drain...