US Patent Issued to Taiwan Semiconductor Manufacturing on May 27 for "Semiconductor device structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,567, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device structure and method for forming the same" was invented by Ta-Chun Lin (Hsinchu, Taiwan), Ming-Che Chen (Taipei, Taiwan), Chun-Jun Lin (Hsinchu, Taiwan), Kuo-Hua Pan (Hsinchu, Taiwan) and Jhon-Jhy Liaw (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure is provided. The method includes forming a gate stack over a substrate. The method includes forming a spacer structure over a sidewall of the gate stack. The method includes forming a source/drain structure in and ...