US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 27 for "Semiconductor device having fin structures with unequal channel heights and manufacturing method thereof" (Belgian Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,586, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having fin structures with unequal channel heights and manufacturing method thereof" was invented by Gerben Doornbos (Leuven, Belgium) and Mark Van Dal (Linden, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a fin structure protruding from a first isolation insulating layer is formed. A second isolation insulating layer made of different material than the first isolation insulating layer is formed so that a first upper portion of the fin structure is exposed. A du...