ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,513, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method for forming the same" was invented by Shy-Jay Lin (Jhudong Township, Taiwan), Chien-Min Lee (Hsinchu, Taiwan), Hiroki Noguchi (Hsinchu, Taiwan), MingYuan Song (Hsinchu, Taiwan), Yen-Lin Huang (Hsinchu, Taiwan) and William Joseph Gallagher (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a substrate having a first side and a second side, a first transistor that includes a first gate over a first protrusion and a first source region and a first drain region interposing the first protrus...