ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,524, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method" was invented by Chia-Ling Chan (New Taipei, Taiwan), Liang-Yin Chen (Hsinchu, Taiwan) and Wei-Ting Chien (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes: a fin on a substrate, fin having a Si portion proximate the substrate and a SiGe portion distal the substrate; a gate stack over a channel region of the fin; a source/drain region adjacent the gate stack; a first doped region in the SiGe portion of the fin, the first doped region disposed between the channel regio...