ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,758, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method" was invented by Yu-Cheng Shiau (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for forming improved isolation features in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes etching a first trench in a substrate; depositing a first insulation layer in the first trench with a first flowable chemical vapor deposition process; depositing a second insulation layer on the first insulation layer with a second flowable chemical vapor ...