US Patent Issued to Taiwan Semiconductor Manufacturing on May 27 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,541, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Yu-Wei Jiang (Hsinchu, Taiwan), Sheng-Chih Lai (Hsinchu County, Taiwan), Feng-Cheng Yang (Hsinchu County, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a gate, a semiconductor channel layer, a gate dielectric layer, a source terminal and a drain terminal. The semiconductor channel layer is disposed over and above the gate. The gate d...