US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 27 for "RRAM circuit and method" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,562, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"RRAM circuit and method" was invented by Chung-Cheng Chou (Hsinchu, Taiwan), Hsu-Shun Chen (Hsinchu, Taiwan), Chien-An Lai (Hsinchu, Taiwan), Pei-Ling Tseng (Hsinchu, Taiwan) and Zheng-Jun Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit includes a bias voltage generator including a first node, a current source coupled between a first power supply node and the first node, and a first transistor and a first resistive device coupled in series between the first node and a power reference node. A drive circuit in...