US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 27 for "Protective liner for source/drain contact to prevent electrical bridging while minimizing resistance" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,570, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Protective liner for source/drain contact to prevent electrical bridging while minimizing resistance" was invented by Kuo-Chiang Tsai (Hsinchu, Taiwan), Hsin-Huang Lin (Hsinchu, Taiwan) and Jyh-Huei Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "One or more active region structures each protrude vertically out of a substrate in a vertical direction and each extend horizontally in a first horizontal direction. A source/drain component is disposed over the one or more active region structures in the vertical direction. A sou...