US Patent Issued to Taiwan Semiconductor Manufacturing on May 27 for "Phase-change memory device and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,761, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Phase-change memory device and method for fabricating the same" was invented by Shao-Ming Yu (Hsinchu County, Taiwan), Yu-Chao Lin (Hsinchu, Taiwan) and Tung-Ying Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A phase-change memory device and a method for fabricating the same are provided. The phase-change memory device comprises a first electrode, a stack and a multi-layered spacer. The first electrode is disposed on and electrically connected to an interconnect wiring of the interconnect structure. The stack is disposed on th...