US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 27 for "Optimized proximity profile for strained source/drain feature and method of fabricating thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,548, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Optimized proximity profile for strained source/drain feature and method of fabricating thereof" was invented by Chun-An Lin (Tainan, Taiwan), Kuo-Pi Tseng (Hsinchu, Taiwan) and Tzu-Chieh Su (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Source and drain formation techniques disclosed herein provide FinFETs with reduced channel resistance and reduced drain-induced barrier lowering. An exemplary three-step etch method for forming a source/drain recess in a source/drain region of a fin includes a first anisotropic etch, an isotropic ...