US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 27 for "Multi-gate devices and fabricating the same with etch rate modulation" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,526, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Multi-gate devices and fabricating the same with etch rate modulation" was invented by Chih-Ching Wang (Kinmen County, Taiwan), Chung-I Yang (Hsinchu, Taiwan), Jon-Hsu Ho (New Taipei, Taiwan), Wen-Hsing Hsieh (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan), Chung-Wei Wu (Hsin-Chu County, Taiwan) and Zhiqiang Wu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members vert...