US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 27 for "Method of manufacturing a semiconductor device and a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,864, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device and a semiconductor device" was invented by Chia-Chi Yu (New Taipei, Taiwan), Jui Fu Hsieh (Zhubei, Taiwan), Yu-Li Lin (Kaohsiung, Taiwan), Chih-Teng Liao (Hsinchu, Taiwan) and Yi-Jen Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method, a first dielectric layer is formed over semiconductor fins, a second dielectric layer is formed over the first dielectric layer, the second dielectric layer is recessed below a top of each of the semiconductor fins, a third dielectric la...