US Patent Issued to Taiwan Semiconductor Manufacturing on May 27 for "Method of forming RDLs and structure formed thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,819, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of forming RDLs and structure formed thereof" was invented by Hung-Jui Kuo (Hsinchu, Taiwan), Yun Chen Hsieh (Baoshan Township, Taiwan), Chen-Hua Yu (Hsinchu, Taiwan) and Hui-Jung Tsai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes encapsulating a device die in an encapsulating material, planarizing the device die and the encapsulating material, and forming a first plurality of conductive features electrically coupling to the device die. The step of forming the first plurality of conductive features include...