US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 27 for "Method of forming a gate structure including semiconductor material implantation into dummy gate stack" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,738, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Method of forming a gate structure including semiconductor material implantation into dummy gate stack" was invented by Shih-Hao Lin (Hsinchu, Taiwan), Jui-Lin Chen (Taipei, Taiwan), Hsin-Wen Su (Hsinchu, Taiwan), Kian-Long Lim (Hsinchu, Taiwan), Bwo-Ning Chen (Keelung, Taiwan) and Chih-Hsuan Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming a semiconductor device are provided. A method according to the present disclosure includes forming, over a workpiece, a dummy gate stack comprising a first semiconductor ma...