ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,720, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Method for improving surface of semiconductor device" was invented by Jung-Tang Wu (Kaohsiung, Taiwan), Yu-Jen Chien (Hsinchu, Taiwan), Szu-Hua Wu (Zhubei, Taiwan), Chin-Szu Lee (Taoyuan, Taiwan) and Yao-Shien Huang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor structure includes forming a first top electrode (TE) layer over a magnetic tunnel junction (MTJ) layer and performing a smoothing treatment on the first TE layer. The smoothing treatment is performed in situ after the forming first TE la...