ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,791, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Metal-insulator-metal capacitor within metallization structure" was invented by Chi-Han Yang (Hsinchu, Taiwan), Lung-Hui Chen (Hsinchu, Taiwan), Shih Chan Wei (New Taipei, Taiwan) and Kuan-Yu Chen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A metallization structure of an integrated circuit (IC) includes: an intermetal dielectric (IMD) layer; a patterned metal layer embedded in the IMD layer; a patterned top metal layer disposed on the IMD layer; electrical vias comprising via material passing through the IMD layer and conne...