US Patent Issued to Taiwan Semiconductor Manufacturing on May 27 for "Memory device and semiconductor die having the memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,515, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and semiconductor die having the memory device" was invented by Tung-Ying Lee (Hsinchu, Taiwan), Shao-Ming Yu (Hsinchu County, Taiwan), Win-San Khwa (Taipei, Taiwan), Yu-Chao Lin (Hsinchu, Taiwan) and Chien-Hsing Lee (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device and a semiconductor die are provided. The memory device includes single-level-cells (SLCs) and multi-level-cells (MLCs). Each of the SLCs and the MLCs includes: a phase change layer; and a first electrode, in contact with the phase change l...