US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 27 for "Memory device and manufacturing thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,468, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device and manufacturing thereof" was invented by Jhon Jhy Liaw (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure relates to an integrated circuit including an array of memory cells connected to word lines and bit lines located on opposite sides of the memory cells. The memory cell may include gate all around transistors. A memory circuit according to the present disclosure also includes edge cells having word line tap structures configured to connect front side word lines with back sid...