US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 27 for "Memory device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,545, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Memory device and manufacturing method thereof" was invented by Yu-Chu Lin (Tainan, Taiwan), Chi-Chung Jen (Kaohsiung, Taiwan), Chia-Ming Pan (Tainan, Taiwan), Su-Yu Yeh (Tainan, Taiwan), Keng-Ying Liao (Tainan, Taiwan) and Chih-Wei Sung (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes sequentially depositing a floating gate layer, a dielectric structure stack, and a control gate layer over a substrate. A first etching process is performed to pattern the control gate layer, the dielectric structure stack, and a to...