ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,505, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory array including epitaxial source lines and bit lines" was invented by Bo-Feng Young (Taipei, Taiwan), Sai-Hooi Yeong (Zhubei, Taiwan), Chih-Yu Chang (New Taipei, Taiwan), Chi On Chui (Hsinchu, Taiwan) and Yu-Ming Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D memory array in which epitaxial source/drain regions which are horizontally merged and vertically unmerged are used as source lines and bit lines and methods of forming the same are disclosed. In an embodiment, a memory array includes a first channel region ove...