US Patent Issued to Taiwan Semiconductor Manufacturing on May 27 for "Magnetic tunnel junction structures and related methods" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,754, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Magnetic tunnel junction structures and related methods" was invented by Jun-Yao Chen (Hsinchu, Taiwan), Chun-Heng Liao (Hsinchu, Taiwan) and Hung Cho Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. A conductive upper electrode is arranged over the magnetic tunnel ju...