ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,566, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Isolated fin structures in semiconductor devices" was invented by Yu-Rung Hsu (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of forming the same are disclosed. The method includes forming a fin with a sacrificial layer on a semiconductor substrate, forming isolation regions on the semiconductor substrate and adjacent to the fin, forming a superlattice structure with first and second nanostructured layers on the sacrificial layer, forming a sacrificial structure that surrounds the superlattice stru...