ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,761, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd. (Hsin-Chu, Taiwan).

"Interconnection structure and manufacturing method thereof" was invented by Chung-Wen Wu (Zhubei, Taiwan), Shiu-Ko Jangjian (Tainan, Taiwan), Chien-Wen Chiu (Tainan, Taiwan) and Chien-Chung Chen (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An interconnection structure includes a first dielectric layer, a bottom conductive feature present in the first dielectric layer, a second dielectric layer present on the first dielectric layer, an aluminum-containing etch stop layer present between the first dielectric layer and the se...