US Patent Issued to Taiwan Semiconductor Manufacturing on May 27 for "Integrated circuit with nanosheet transistors with metal gate passivation" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,731, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integrated circuit with nanosheet transistors with metal gate passivation" was invented by Mao-Lin Huang (Hsinchu, Taiwan), Lung-Kun Chu (Hsinchu, Taiwan), Chung-Wei Hsu (Hsinchu, Taiwan), Jia-Ni Yu (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for processing an integrated circuit includes forming N-type and P-type gate all around transistors and core gate all around transistors. The method deposits a first metal gate...