US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 27 for "Integrated circuit with a Fin and gate structure and method making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,527, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Integrated circuit with a Fin and gate structure and method making the same" was invented by Kuo-Cheng Chiang (Hsinchu County, Taiwan), Teng-Chun Tsai (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure. The semiconductor structure includes device fins formed on a substrate; fill fins formed on the substrate and disposed among the device fins; and gate stacks formed on the device fins and the fill fins....