US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 27 for "Gate isolation feature and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,528, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Gate isolation feature and manufacturing method thereof" was invented by Kuan-Ting Pan (Hsinchu, Taiwan), Huan-Chieh Su (Changhua County, Taiwan), Jia-Chuan You (Taoyuan County, Taiwan), Shi Ning Ju (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan), Yi-Ruei Jhan (Hsinchu, Taiwan), Li-Yang Chuang (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a plurality of fin structures extending along a first direction, a plurality of gate structure segments ...