ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,602, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Forming ESD devices using multi-gate compatible processes" was invented by Chih-Hung Wang (Hsinchu, Taiwan), Ming-Shuan Li (Hsinchu County, Taiwan), Chih Chieh Yeh (Taipei, Taiwan), Zi-Ang Su (Taoyuan County, Taiwan) and Chia-Ju Chou (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate and an epitaxial stack disposed above the semiconductor substrate. The epitaxial stack includes first and second type epitaxial layers, the ...