US Patent Issued to Taiwan Semiconductor Manufacturing on May 27 for "FinFET device and method of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,759, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"FinFET device and method of forming same" was invented by Bo-Cyuan Lu (New Taipei, Taiwan), Tai-Chun Huang (Hsinchu, Taiwan), Chih-Tang Peng (Zhubei, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device a method of forming the same are provided. The semiconductor device includes a substrate, a first isolation structure and a second isolation structure over the substrate, a semiconductor fin over the substrate and between the first isolation structure and the second isolation structure, and a...