US Patent Issued to Taiwan Semiconductor Manufacturing on May 27 for "Fin field-effect transistor device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,525, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin field-effect transistor device and method of forming the same" was invented by Jian-Jou Lian (Tainan, Taiwan), Chun-Neng Lin (Hsinchu, Taiwan), Ming-Hsi Yeh (Hsinchu, Taiwan), Chieh-Wei Chen (Taoyuan, Taiwan) and Tzu-Ang Chiang (I-lan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate electrode over a channel region of a semiconductor fin, first spacers over the semiconductor fin, and second spacers over the semiconductor fin. A lower portion of the gate electrode is between the first spacers. An upper...