ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,506, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric device and methods of fabrication thereof" was invented by Sai-Hooi Yeong (Zhubei, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first dielectric layer, a first conductive feature in the first dielectric layer, a second dielectric layer over the first dielectric layer, an ferroelectric random-access memory (FeRAM) cell in the second dielectric layer, a third dielectric layer over the second dielectric layer, and a second conductive feature in the third dielect...