ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,737, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Feature patterning using pitch relaxation and directional end-pushing with ion bombardment" was invented by Tzung-Hua Lin (Hsinchu, Taiwan), Yi-Ko Chen (Hsinchu, Taiwan), Chia-Chu Liu (Hsinchu, Taiwan) and Hua-Tai Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure includes forming a pattern having first and second line features extending in a first direction on a substrate. After depositing a photoresist layer on the substrate to cover the pattern, the photoresist layer is patterned to...