ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,601, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Dual-port SRAM structure" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The static random access memory (SRAM) cell of the present disclosure includes a first pull-down device, a second pull-down device, a first pass-gate device, and a second pass-gate device in a first p-well on a substrate; a third pull-down device, a fourth pull-down device, a third pass-gate device, and a fourth pass-gate device in a second p-well on the substrate; a first pull-up device and a second pull-up device in an n-...