US Patent Issued to Taiwan Semiconductor Manufacturing on May 27 for "Dielectric on wire structure to increase processing window for overlying via" (Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,817, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Dielectric on wire structure to increase processing window for overlying via" was invented by Hsin-Chieh Yao (Hsinchu, Taiwan), Chung-Ju Lee (Hsinchu, Taiwan), Chih Wei Lu (Hsinchu, Taiwan), Hsi-Wen Tien (Xinfeng Township, Taiwan), Yu-Teng Dai (New Taipei, Taiwan) and Wei-Hao Liao (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer over a substrate. An interconnect wire extends through the first interconnect die...