US Patent Issued to Taiwan Semiconductor Manufacturing on May 27 for "Dielectric fin structures with varying height" (Taiwanese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,549, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Dielectric fin structures with varying height" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor fin structure extending in a first direction on a substrate and a first dielectric fin structure extending parallel to the fin structure, the first dielectric fin structure being underneath a gate structure extending in a second direction that is perpendicular to the first direction. The device further includes a second dielectric fin structure extending p...