ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,574, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Device providing multiple threshold voltages and methods of making the same" was invented by Yung-Hsiang Chan (Taichung, Taiwan), Shan-Mei Liao (Hsinchu, Taiwan), Wen-Hung Huang (Hsin-Chu, Taiwan), Jian-Hao Chen (Hsinchu, Taiwan), Kuo-Feng Yu (Hsinchu County, Taiwan) and Mei-Yun Wang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a first transistor disposed over the substrate and including a first channel, a first interfacial layer over the first channel, a first gate dielectric ...