ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,863, issued on May 27, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Contact structures in semiconductor devices" was invented by Mrunal Abhijith Khaderbad (Hsinchu, Taiwan), Wei-Yen Woon (Hsinchu, Taiwan), Cheng-Ming Lin (Kaohsiung, Taiwan), Han-Yu Lin (Hsinchu, Taiwan) and Szu-Hua Chen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor device and a method for forming the semiconductor device. The method includes forming a fin structure on a substrate, forming a gate structure on the fin structure, and forming a source/drain (S/D) region on the fin struc...